SIC mosfet系列芯片ASC20N3300MT4 3300V

ASC20N3300MT4 3300V N-Channel MOSFET

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

Features

 High Speed Switching with Low Capacitances
 High Blocking Voltage with Low RDS(on)
 Simple to drive with Standard Gate Drive
 100% avalanche tested
 Maximum junction temperature of 150°C
 ROHS Compliant

Application

 EV Charging
 DC-AC Inverters
 High Voltage DC/DC Converters
 Switch Mode Power Supplies
 Power Factor Correction Modules
 Motor Drives

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