SIC mosfet系列芯片ASC60N1200MT4 1200V

ASC60N1200MT4 1200V N-Channel MOSFET

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

Features

 High Speed Switching with Low Capacitances
 High Blocking Voltage with Low RDS(on)
 Optimized package with separate driver source pin
 Easy to parallel and simple to drive
 ROHS Compliant, Halogen free

Application

 EV motor drive
 High Voltage DC/DC Converters
 Switch Mode Power Supplies
 Solar inverters
 EV charging

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