ASR160N1200MD88PB 碳化硅新品上架

Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased power density, reduced EMI, and
reduced system size.
Features
⚫ High Speed Switching with Low Capacitances
⚫ High Blocking Voltage with Low RDS(on)
⚫ Low impedance package with driver source pin
⚫ Easy to parallel and simple to drive
⚫ ROHS Compliant, Halogen free
Application
⚫ EV Charging
⚫ High Voltage DC/DC Converters
⚫ Switch Mode Power Supplies
⚫ Power Factor Correction Modules

描述

碳化硅（SiC）MOSFET采用了一种全新的技术，可提供卓越的开关

性能和更高的可靠性。此外，低导通电阻和

紧凑的芯片尺寸确保了低电容和栅极电荷。因此，系统的好处包括

最高的效率、更快的工作频率、更高的功率密度、更低的EMI，以及

减小了系统尺寸。

特点

⚫ 低电容高速开关

⚫ RDS低时阻塞电压高（打开）

⚫ 带驱动器源引脚的低阻抗封装

⚫ 易于并行且易于驱动

⚫ 符合ROHS标准，无卤素

应用

⚫ 电动汽车充电

⚫ 高压DC/DC转换器

⚫ 开关模式电源

⚫ 功率因数校正模块