SIC MOSFET 1200V N-Channel MOSFET DFN10*12

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gatecharge. Consequently,system benefits include
highest efficiency,fasteroperating frequency,increased power density,reduced EMI, and
reduced system size.

Features

• High Speed Switching with LowCapacitances
• High Blocking Voltagewith Low RDS(on)
• Simple to drive with Standard Gate Drive
• 100% avalanche tested
• Maximum junction temperature of 150 C
• ROHS Compliant

• Part Number：ASR45N1200D02
• Marking：ASR45N1200D02
• Package：DFN10*12
• Packaging：TOLL

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