提供以SiC MOS芯片、SiC模块为核心的功率转换解决方案,
适用于:新能源汽车、电机驱动、充电桩、风能逆变、光伏逆变、工业电源、PD快充等领域。
SiC MOS芯片
1. 采用第三代芯片技术,功率密度可提高20%;
2. 实现电压650V-3300V,电流5A-150A SiC MOS量产供货。
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Model Name | Package | Voltage | Ron | Temperature Range | Status | Datasheet |
ASC100N1200MT3 | TO-247-3L | 1200V | 16mohm | -40~150°C | Product | ASC100N1200MT3.pdf |
ASC60N1200MT3 | 45mohm | -40~150°C | Product | ASC60N1200MT3.pdf | ||
ASC30N1200MT3 | 80mohm | -40~150°C | Product | ASC30N1200MT3.pdf | ||
ASC100N1200MT4 | TO-247-4L | 16mohm | -40~150°C | Product | ASC100N1200MT4.pdf | |
ASC60N1200MT4 | 45mohm | -40~150°C | Product | ASC60N1200MT4.pdf | ||
ASC30N1200MT4 | 80mohm | -40~150°C | Product | ASC30N1200MT4.pdf | ||
ASR50N1200MD88 | DFN8*8 | 50mohm | -40~150°C | Product | ASR50N1200MD88.pdf | |
ASR160N1200D88 | 160mohm | -40~150°C | Product | ASR160N1200D88.pdf |
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